Vishay has introduced 16 new 650 V and 1200 V SiC Schottky diodes in the industry-standard SOT-227 package. Designed to ...

At the University of Glasgow’s James Watt Nanofabrication Centre, the team used surface chemistry techniques to improve the ...

While USB-C chargers and adapters have been the forerunners, GaN is now on its way to reaching tipping points in its adoption in further industries, substantially driving the market for GaN-based ...

Forvia Hella, an international automotive supplier, has selected Infineon's new CoolSiC automotive MOSFET 1200 V for its next ...

Chinese GaN firm Innoscience and its subsidiary Innoscience (Suzhou) Semiconductor have filed a lawsuit against Infineon Technologies (China), its subsidiary Infineon Technologies (Wuxi) and a ...