Abstract: This work demonstrates a novel junction termination extension (JTE) with a graded charge profile for vertical GaN p-n diodes. The fabrication of this JTE obviates GaN etch and requires only ...
State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun130033, China University of Chinese Academy of ...
Abstract: We report on vertical GaN junction barrier Schottky (JBS) diodes formed by Mg ion implantation and ultrahigh -pressure annealing (UHPA). The static ON-state characteristics of the diodes ...
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