Tech Xplore on MSN
Next-generation memory: Tungsten-based SOT-MRAM achieves nanosecond switching and low-power data storage
The ability to reliably switch the direction of magnetic alignment in materials, a process known as magnetization switching, ...
9don MSN
A new method to build more energy-efficient memory devices could lead to a sustainable data future
A research team led by Kyushu University has developed a new fabrication method for energy-efficient magnetic random-access ...
The Brighterside of News on MSN
How black holes generate massive magnetic and particle-driven jets
Deep in the core of most galaxies, hidden by spinning clouds of gas and dust, black holes spin like cosmic engines. These ...
The team has solved a materials stability problem that has kept spin-orbit torque magnetic random-access memory (SOT-MRAM) from moving beyond the lab and into commercial production.
Melexis announced the MLX90514, a dual-input inductive sensor IC that simultaneously processes signals from two sets of coils ...
AZoCleantech on MSN
New Spintronics Breakthrough Promises Faster, Greener Data Storage for AI
TmIG thin films fabricated via on-axis sputtering show strong potential for efficient MRAM, transforming data storage in the ...
With the rapid spread of generative AI, the demand for more energy-efficient methods of powering the hardware is becoming ...
From high-precision surgical platforms to automated drug delivery systems, robotic technologies are driving new standards in ...
Melexis’ dual-input inductive sensor simultaneously reads signals from two sets of coils to deliver accurate torque and angle measurements.
Whether you’re a DIY devotee, a tech tinkerer, or an adventure-ready creator, Fanttik’s latest innovations are designed to ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results