Abstract: This paper presents a fast overcurrent and short circuit protection based on the mirror source detection method for 1200 V/1200 A Silicon Carbide (SiC) MOSFETs used in a high power Dual ...
Abstract: GaN HEMT devices exhibit lower short-circuit capability, posing significant risks in practical applications. This paper presents a fast short circuit (SC) protection circuit for ohmic gate P ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback