The hybrid memory system combines the best traits of ferroelectric capacitors and memristors in a single memory stack.
Abstract: This paper proposed a V-band 4096-QAM OFDM modulator with AM-AM IQ Optimization for image rejection ratio (IRR) improvement and zero dc-power consumption fabricated in 28nm CMOS technology.
Featuring 2.5-kV capacitive isolation, the Littelfuse IX3407B gate driver improves signal integrity and safety in power conversion systems.
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