ASM GaN: Industry Standard Model for GaN RF and Power Devices—Part-II: Modeling of Charge Trapping
Abstract: Because of charge trapping in GaN HEMTs, dc characteristics of these devices are not representative of high-frequency operation. The advanced spice model GaN model presented in Part I of ...
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Abstract: This paper presents a nonlinear state-space model (SSM) for a low power 28-nm complementary metal–oxide–semiconductor switched-capacitor digital-to-analog converter. The proposed model ...
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