Abstract: In this work, we present the recent advancements in the industry-standard surface potential-based BSIM-SOI compact model, designed for state-of-the-art SOI devices. The model incorporates a ...
Abstract: A closed-form, analytical, and unified model for the surface potential from source to drain in nanowire (NW) gate-all-around (GAA) tunneling field effect transistors (TFETs) is proposed and ...
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