Abstract: In this article, we introduce a new semi-analytical model to calculate the erase (ERS) transients of 3-D gate-all-around (GAA) NAND flash memories. A previously proposed program (PGM) model ...
Abstract: The ever-increasing demand for high-density nonvolatile memory devices has led to the widespread adoption of 3-D triple-level cell (TLC) NAND flash memory. TLC NAND flash cut stored voltage ...
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