IEEE

Characterization of Drain-Induced Barrier Lowering in GaN HEMTs Using a Drain Current Injection Technique

Abstract: Assessing short channel effects (SCEs) is crucial in the high-frequency optimization of downscaled field-effect transistors (FETs) such as GaN high electron mobility transistors (HEMTs).

Does the UK go far enough to protect children from conspiracy theorist parents?

The inquest following the death of Paloma Shemirani raises the question of how to prevent young people from health ...
Frontiers

Pharmacogenomics of antibiotic-induced hypersensitivity reactions: current evidence and implications in clinical practice

Adverse drug reactions (ADRs) are gradually becoming a concerning health threat worldwide in patients undergoing acute or chronic therapy (Osanlou et al., 2018). Rawlins and Thompson grouped ADRs into ...
NDTV

How New Visa Rules By Trump Is Shattering American Dream For Many Indians

Changes to H-1B visas, which included a new $100,000 fee left US firms scrambling to figure out implications H-1B visa allows 85,000 skilled foreign workers, three-quarters of recipients are Indian ...
IEEE

A FEM Simulation Model to Calculate Local Currents and Voltages of NI REBCO Coil With Both Screening Current and Transverse Current Considered

Abstract: Numerical simulations of no-insulation REBCO magnet should be able to calculate the transverse current flowing along the turn-to-turn contact path and screening current induced by the nature ...