Abstract: This study attempts to propose a design-for-reliability (DfR) methodology for solder joint reliability characterization of a developed 1700V/100A, 9.6 kW SiC power metal-oxide semiconductor ...
Abstract: The Silicon Carbide (SiC) MOSFET is widely recognized for its exceptional performance attributes. However, two primary issues restrict the operational capabilities of SiC MOSFET power ...
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