Abstract: Gallium Nitride based high electron mobility transistors with p-type gate cap (p-GaN gate HEMTs) attract more and more attentions in the field of power electronics. To unleash the high ...
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Simple formula could guide the design of faster-charging, longer-lasting batteries
At the heart of all lithium-ion batteries is a simple reaction: Lithium ions dissolved in an electrolyte solution ...
Harnessing quantum states that avoid thermalization enables energy harvesters to surpass traditional thermodynamic limits ...
Abstract: The rotating high frequency voltage injection (RHFVI) method is widely used for sensorless control of permanent magnet synchronous motor (PMSM) at low and zero speed. The advantage of this ...
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