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A 270-to-300 GHz Amplifier-Last Transmitter With 6.7 dBm Peak Output Power Using 130 nm SiGe Process
Abstract: This paper presents an amplifier-last transmitter (TX), operating from 270 -to- 300 GHz, in a 130 nm SiGe BiCMOS process. The TX is composed of a 250 GHz multiplier-by- 6 local oscillator ...
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