Abstract: In this article, we introduce a new semi-analytical model to calculate the erase (ERS) transients of 3-D gate-all-around (GAA) NAND flash memories. A previously proposed program (PGM) model ...
Abstract: Nanowire field-effect transistor (NW FET) biosensors are known to be highly sensitive devices that can detect extremely low concentrations of biomolecules. In this article, we present an ...
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