Abstract: We report on vertical GaN junction barrier Schottky (JBS) diodes formed by Mg ion implantation and ultrahigh -pressure annealing (UHPA). The static ON-state characteristics of the diodes ...
Recently, the iGaN Laboratory led by Professor Haiding Sun at the School of Microelectronics, University of Science and ...
aDepartment of Epidemiology and Biostatistics, School of Public Health, Peking University, No. 38, Xueyuan Road, Haidian District, Beijing, 100191, China bPeking ...
Henan Key Laboratory of Advanced Nylon Materials and Application, School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, PR China ...
Abstract: The deep level of n-type donors for diamond limits the development of diamond-based electronics, including bipolar transistors, junction field effect transistors, etc. In this study, ...
Autism or - as it is medically referred to - autism spectrum disorder, is used to describe a range of conditions which can affect how a person communicates and interacts with others. More than one in ...
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