STMicroelectronics is aiming at industrial and telecom power supplies with half-bridge driver for GaN power transistors. With a maximum rail voltage of 220V, STDRIVEG211, as it will be known, is ...
A team led by academician Huang Ru and Professor Wu Yanqing from the School of Integrated Circuits at Peking University has ...
Uncover how mixed-signal ICs are transforming medical wearables with smaller and more power-efficient sensor integration, ...
In 2025, leveraging this experience and continuous R&D we introduce our next silicon photonics PIC100 platform for 200 ...
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Marantz Cinema 30
The Marantz Cinema 30’s premium price is £4000 / $4500 / AU$7900. That makes it vastly more expensive than the Denon ...
Infineon’s CoolGaN 100-V G1 family of GaN-based transistors are qualified to the AEC-Q101 automotive standard.
Johannes Schoiswohl, head of the GaN Business Line at Infineon said: “Our 100V GaN auto transistor solutions and the upcoming portfolio extension into the high-voltage range are an important milestone ...
Tech Xplore on MSN
Scientists smash record in stacking semiconductor transistors for large-area electronics
King Abdullah University of Science and Technology (KAUST; Saudi Arabia) researchers have set a record in microchip design, ...
Back in 1966, a suitable toy for a geeky kid was a radio kit. You could find simple crystal radio sets or some more advanced ...
We were recently tipped off to quite a resource — on the Texas Instruments website, there’s a page where you can view and ...
Abstract: A high linear mono die FEM (Front End Module) 1.8-5GHz is presented in this paper. The FEM consists of a 0.13 μm SiGe BiCMOS broadband power amplifier. The power amplifier circuit adopts a ...
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