Abstract: This work demonstrates a novel junction termination extension (JTE) with a graded charge profile for vertical GaN p-n diodes. The fabrication of this JTE obviates GaN etch and requires only ...
Engineeringness on MSN
Semiconductors Explained: Band Gap, Doping, and Function
This video explains how semiconductors work and how their electrical properties are controlled through energy band gaps and ...
Abstract: We report on vertical GaN junction barrier Schottky (JBS) diodes formed by Mg ion implantation and ultrahigh -pressure annealing (UHPA). The static ON-state characteristics of the diodes ...
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