Abstract: The RADSAFE simulation framework is described and applied to model SEU in a 0.25 mum CMOS 4 Mbit SRAM. For this circuit, the RADSAFE approach produces trends similar to those expected from ...
Abstract: Single-event upset sensitivity of 55- and 180-nm SRAM devices with error detection and correction (EDAC) exhibits obvious ion flux and scrubbing time ...
The first essay anybody writes is for school. Same here. But the only examples I remember are the ones I wrote at the end, in my A-level exams. One compared Hitler to Stalin. Another, Martin Luther ...
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