Researchers at Fudan University in Shanghai have developed the world's first fully functional memory chip made entirely from two-dimensional materials. The achievement, published in Nature, ...
The team has solved a materials stability problem that has kept spin-orbit torque magnetic random-access memory (SOT-MRAM) from moving beyond the lab and into commercial production.
The ability to reliably switch the direction of magnetic alignment in materials, a process known as magnetization switching, ...
Abstract: In this paper, we propose an online federated learning framework with massive random access, aiming to learn a sequence of global models using local data that are sequentially collected by ...
Computer acting sluggish? You might need more memory. Here's how to check how much RAM you have, and how much your PC or Mac ...
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Abstract: The achievable rate of code over resistive random-access memory (ReRAM) channel with finite selector failures was published in our recent work. The rate was derived under the assumption of ...