Abstract: The dynamic thermal coupling within gallium nitride (GaN) high electron mobility transistors (HEMTs) is characterized and modeled in a finite element method (FEM) solver to determine the ...
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Abstract: Gallium nitride (GaN) Schottky barrier diodes (SBDs), as essential devices in power electronic systems, are particularly vulnerable to high-power microwave (HPM) pulses. HPM pulses can ...