Nexperia’s CCPAK1212 100-V MOSFETs deliver ultra-low conduction losses and high power density in 48-V automotive applications ...
Abstract: In the parallel SiC MOSFETs circuit, ignoring the influence of the different parameters of the chip itself, only the parasitic inductance and the initial case temperature of the SiC MOSFET ...
This is a "universal" enclosure. The PCB Cage in the enclosure accommodates the RAK 19007 Starter Kit, Heltec WiFi LoRa32(V3), Heltec T114, or any other similar board sizes less than 60mm x 35mm x ...
Semi-Physics-Based SiC MOSFET Circuit Simulation Model Capable of Extrapolation to High Temperatures
Abstract: In this study, a SiC MOSFET circuit simulation model capable of predicting ultrahigh-temperature operation, including short-circuit conditions, was developed. A fundamental structure ...
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