Veteran-led Kupros has figured out a way to dramatically speed up the prototyping process for 3D-printed electronics.
The Canon RF 100mm f/2.8L Macro IS USM is a superb lens for anyone serious about close-up or portrait work. It's incredibly sharp, well-built and offers creative bokeh control with the unique SA ring.
Nordic Semi's nRF54LM20A is a new Cortex-M33-based high-memory wireless MCU part of the nRF54L Series with double the SRAM and higher flash capacity ...
Despite a flat market for the next couple of years the RF front-end module market, which was worth $15.4bn in 2024, will be worth more than $17bn by 2030, says Yole. It is being driven by 5G, new ...
BOSTON — Boston’s Trevor Story had a strange Fenway Park homer in the sixth inning against Cleveland on Monday when the ball went off an outfielder’s glove and then the Pesky Pole. Facing right-hander ...
There was an error while loading. Please reload this page. This tool is designed to facilitate serial communication with an Arduino device connected to your computer ...
When your department has submitted your appointment information to Human Resources you will receive notification from Human Resources about your benefits eligibility and upcoming benefit orientation ...
This is a library for the Arduino IDE that helps interface with ST's VL53L4CD time-of-flight distance sensor. The library makes it simple to configure the sensor and read range data from it via I²C.
Selective SSE swell from Narda bumps up through the day. Little NW swell in the mix. The initial SSE swell energy from Narda is especially selective early but builds for most breaks through the second ...
Despite its hybrid status, the Canon RF 85mm f/1.4L VCM is still going to appeal massively to photographers. And at just 18% the length, 53% the weight and 55% the price of the f/1.2 alternative, with ...
Abstract: The major challenge in learning-based RF sensing is acquiring high-quality large-scale annotated datasets. Unlike visual datasets, RF signals are inherently non-intuitive and ...
Abstract: Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) continue to play a critical role in radio frequency (RF) applications. Precise characterization of GaN HEMTs under realistic ...