Abstract: This study attempts to propose a design-for-reliability (DfR) methodology for solder joint reliability characterization of a developed 1700V/100A, 9.6 kW SiC power metal-oxide semiconductor ...
Abstract: The paper introduces a simple analytical model for the overvoltage and the oscillation on the body’s diode of the SiC MOSFET module during its reverse-recovery. The model provides a precise ...
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