Load switches come in a variety of forms, including discrete MOSFETs that you can drive with your circuit's onboard logic; gate-drive ICs in combination with discrete FETs; and integrated controller, ...
Even as industry moves into the era of the high k metal gate (HKMG) and FinFET transistor, chipmakers continue to seek ways to improve device performance. One of the latest advances and the subject of ...
Leuven, Belgium-based nanoelectronics and nanotechnology research center IMEC is detailing high-performance germanium (Ge) pMOS devices using a silicon (Si) compatible process flow at the IEEE ...
X-Fab Silicon Foundries has added 375V power transistors to the devices available from its 180nm deep trench isolation BCD-on-SoI platform chip fab. The second generation of its XT018 super-junction ...
(Nanowerk News) One promising application of GeSn would be as stressor material for Ge channels. To outperform current uniaxial compressive strained Si channel pMOSFET technology (with embedded SiGe ...
Device scaling is getting much harder at each new process node. Even defining what it means is becoming a challenge. In the past, gate length and metal pitch went down and device density went up.
I was testing a circuit and found many discrepancies from the paper design I used to create it. The dynamics of the circuit were a bit unexpected, andthe noise level was much larger than required. I ...
X-Fab Silicon Foundries has added 375V power transistors to the devices available from its 180nm deep trench isolation BCD-on-SoI platform chip fab. The second generation of its XT018 super-junction ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback