Abstract— Today’s on-chip Analog/Mixed-Signal and RF (A/RF) systems have reached a limit of size and complexity where transistor-level SPICE and FastSPICE simulation approaches cannot deliver a ...

A team led by academician Huang Ru and Professor Wu Yanqing from the School of Integrated Circuits at Peking University has ...

CYPRESS, Calif.--(BUSINESS WIRE)--The Semiconductor Division of Mitsubishi Electric US, Inc. today announced the availability of a new version of its RD07MUS2B 7W RF transistor that exceeds the ...

Freescale Semiconductor, supplier of high-power radio-frequency (RF) power transistors for 2.5G and 3G wireless base-station amplifiers, has shipped more than 10 million high-power, high-frequency RF ...

LEUVEN (Belgium), June 12, 2025— Imec, a world-leading research and innovation hub in nanoelectronics and digital technologies, has set a new benchmark in RF transistor performance for mobile ...

Nowadays, laterally diffused metal oxide semiconductor (LDMOS) transistors are widely used for RF Power Amplification and in many applications. A simplified circuit of an LDMOS amplifier bias circuit ...

Although the ubiquitous LM386 IC was designed to be used as an audio amplifier, it has a number of undocumented characteristics that can be exploited to create simple radio receiver circuits that ...

Chiseled for UHF pulsed radar applications, the Model 0405SC-1500M RF power transistor exploits state-of-the-art SiC technology to provide 1,500W of peak power in a compact single-ended package that ...

Ampleon has released the first of a family of RF power devices based upon its Advanced Rugged Technology (ART) derivative of its proven 9th generation high voltage LDMOS process technology. The ...

Bell Labs scientists behind the invention of the transistor would, at last, have the U.S. Patent in their hands.