Abstract— Today’s on-chip Analog/Mixed-Signal and RF (A/RF) systems have reached a limit of size and complexity where transistor-level SPICE and FastSPICE simulation approaches cannot deliver a ...

A team led by academician Huang Ru and Professor Wu Yanqing from the School of Integrated Circuits at Peking University has ...

Graphene has attracted much interest as a future channel material in radio frequency electronics because of its superior electrical properties. Fabrication of a graphene integrated circuit without ...

CYPRESS, Calif.--(BUSINESS WIRE)--The Semiconductor Division of Mitsubishi Electric US, Inc. today announced the availability of a new version of its RD07MUS2B 7W RF transistor that exceeds the ...

LEUVEN (Belgium), June 12, 2025— Imec, a world-leading research and innovation hub in nanoelectronics and digital technologies, has set a new benchmark in RF transistor performance for mobile ...

Although the ubiquitous LM386 IC was designed to be used as an audio amplifier, it has a number of undocumented characteristics that can be exploited to create simple radio receiver circuits that ...

Nowadays, laterally diffused metal oxide semiconductor (LDMOS) transistors are widely used for RF Power Amplification and in many applications. A simplified circuit of an LDMOS amplifier bias circuit ...

Ampleon has released the first of a family of RF power devices based upon its Advanced Rugged Technology (ART) derivative of its proven 9th generation high voltage LDMOS process technology. The ...

Bell Labs scientists behind the invention of the transistor would, at last, have the U.S. Patent in their hands.

would invent the first silicon transistor. In 1959, Jack Kilby of Texas Instruments filed a patent for the first integrated ...