TL;DR: Samsung Electronics has successfully developed its 10nm-class 6th-generation D1c DRAM process, enabling advanced HBM4 memory production. This breakthrough enhances chip stability, reduces ...
Micron has begun sampling of its first LPDDR5X memory devices produced using its new 1γ (1-gamma) fabrication process that uses EUV lithography with customers, the company announced at its conference ...
LONDON — Belgian research organization IMEC has extended its work on 32-nm CMOS device scaling to include a project on DRAM MIMCAP (metal-insulator-metal capacitors) process technology. The group says ...
A new technical paper titled “Novel STI Technology for Enhancing Reliability of High-k/Metal Gate DRAM” was published by researchers at Sungkyunkwan University and Samsung Electronics. “The challenges ...
BOISE, Idaho, Nov. 01, 2022 (GLOBE NEWSWIRE) -- Micron Technology, Inc. (Nasdaq: MU), announced today that it is shipping qualification samples of its 1β (1-beta) DRAM technology to select smartphone ...
BOISE, Idaho, Jan. 26, 2021 (GLOBE NEWSWIRE) -- Micron Technology, Inc. (Nasdaq: MU), today announced volume shipment of 1α (1-alpha) node DRAM products built using the world’s most advanced DRAM ...
TL;DR: Samsung's 1c DRAM yield for next-gen HBM4 memory has improved from 0% to around 40%, enabling planned mass production later this year. Design restructuring and process optimizations enhanced ...
For decades, compute architectures have relied on dynamic random-access memory (DRAM) as their main memory, providing temporary storage from which processing units retrieve data and program code. The ...
CEO Andy Hsu will introduce new applications and variations for 3D NAND flash and 3D DRAM, including a new AI application called "Local Computing", drastically increasing AI chip performance to a new ...
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